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数据搜索系统，热门电子元器件搜索 |
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AP2300AI 数据表(PDF) 1 Page - A POWER MICROELECTRONICS |
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AP2300AI 数据表(HTML) 1 Page - A POWER MICROELECTRONICS |
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1 / 7 page  AP2300AI 20V N-Channel Enhancement Mode MOSFET AP2300AI RVE3.1 永源微電子科技有限公司 Description The AP2300AI uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = 20V ID =4.5A RDS(ON) < 30mΩ @ VGS=4.5V （Type：22mΩ） Application Battery protection Load switch Uninterruptible power supply Package Marking and Ordering Information Product ID Pack Marking Qty(PCS) AP2300AI SOT23L 2300 3000 Absolute Maximum Ratings (TC=25 ℃unless otherwise noted) Symbol Parameter Rating Units VDS Drain-Source Voltage 20 V VGS Gate-Source Voltage ± 12 V ID@TA=25℃ Continuous Drain Current, VGS @ 4.5V1 4.5 A ID@TA=70℃ Continuous Drain Current, VGS @ 4.5V1 2.8 A IDM Pulsed Drain Current2 14.4 A PD@TA=25℃ Total Power Dissipation3 1 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ RθJA Thermal Resistance Junction-ambient 1 125 ℃ /W RθJC Thermal Resistance Junction-Case1 80 ℃ /W |
类似零件编号 - AP2300AI |
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类似说明 - AP2300AI |
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