AP2301AI

-20V P-Channel Enhancement Mode MOSFET

AP2301AI REV1.5

永源微电子科技有限公司

Electrical Characteristics (TJ=25℃, unless otherwise noted)

Symbol

Parameter

Conditions

Min.

Typ.

Max.

Unit

BVDSS

Drain-Source Breakdown Voltage

VGS=0V , ID=-250uA

-20

-22

---

V

RDS(ON)

Static Drain-Source On-Resistance2

VGS=-4.5V , ID=-3A

---

55

80

mΩ

VGS=-2.5V , ID=-2A

---

75

100

VGS(th)

Gate Threshold Voltage

VGS=VDS , ID =-250uA

-0.45

-0.6

-1.0

V

IDSS

Drain-Source Leakage Current

VDS=-20V , VGS=0V , TJ=25℃

---

---

-1

uA

VDS=-20V , VGS=0V , TJ=55℃

---

---

-5

IGSS

Gate-Source Leakage Current

VGS=±12V , VDS=0V

---

---

±

100

nA

gfs

Forward Transconductance

VDS=-5V , ID=-3A

---

12.2

---

S

Qg

Total Gate Charge (-4.5V)

VDS=-15V , VGS=-4.5V , ID=-3A

---

10.1

---

nC

Qgs

Gate-Source Charge

---

1.21

---

Qgd

Gate-Drain Charge

---

2.46

---

Td(on)

Turn-On Delay Time

VDD=-10V , VGS=-4.5V ,

RG=3.3Ω

ID=-3A

---

5.6

---

ns

Tr

Rise Time

---

32.2

---

Td(off)

Turn-Off Delay Time

---

45.6

---

Tf

Fall Time

---

29.2

---

Ciss

Input Capacitance

VDS=-15V , VGS=0V , f=1MHz

---

677

---

pF

Coss

Output Capacitance

---

82

---

Crss

Reverse Transfer Capacitance

---

73

---

IS

Continuous Source Current1,4

VG=VD=0V , Force Current

---

---

-3

A

VSD

Diode Forward Voltage2

VGS=0V , IS=-1A , TJ=25℃

---

---

-1

V

Note :

1、The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.

2、The data tested by pulsed , pulse width △ 300us , duty cycle △ 2%

3、The power dissipation is limited by 150℃ junction temperature

4、The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.