AP2301DI

-20V P-Channel Enhancement Mode MOSFET

AP2301DI REV1.0

永源微電子科技有限公司

Electrical Characteristics (TJ=25℃, unless otherwise noted)

Symbol

Parameter

Test Condition

Min.

Typ.

Max.

Units

V(BR)DSS

Drain-Source Breakdown Voltage

VGS=0V,ID= -250μA

-20

-24

-

V

IDSS

Zero Gate Voltage Drain Current

VDS = -20V, VGS = 0V,

-

-

-1

μA

IGSS

Gate to Body Leakage Current

VDS =0V, VGS = ±12V

-

-

±100

nA

VGS(th)

Gate Threshold Voltage

VDS= VGS, ID= -250μA

-0.4

-0.7

-1.0

V

RDS(on)

Static Drain-Source on-Resistance

VGS =-4.5V, ID =-2A

-

118

150

mΩ

VGS =-2.5V, ID =-1A

-

165

190

Ciss

Input Capacitance

VDS = -10V, VGS = 0V, f

= 1.0MHz

-

34

-

pF

Coss

Output Capacitance

-

24

-

pF

Crss

Reverse Transfer Capacitance

-

23

-

pF

Qg

Total Gate Charge

VDS = -10V, ID = -2A,

VGS = -4.5V

-

2.4

-

nC

Qgs

Gate-Source Charge

-

0.6

-

nC

Qgd

Gate-Drain(“Miller”) Charge

-

0.4

-

nC

td(on)

Turn-on Delay Time

VDD = -10V, RL=5Ω,

RGEN=3Ω,VGS=-4.5V,

-

5

-

ns

tr

Turn-on Rise Time

-

18

-

ns

td(off)

Turn-off Delay Time

-

79

-

ns

tf

Turn-off Fall Time

-

42

-

ns

IS

Maximum Continuous Drain to Source Diode Forward Current

-

-

-2.1

A

ISM

Maximum Pulsed Drain to Source Diode Forward Current

-

-

-7.2

A

VSD

Drain to Source Diode Forward Voltage

VGS = 0V, IS = -2A

-

-

-1.2

V

Note :

1、The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.

2、The data tested by pulsed , pulse width △ 300us , duty cycle △ 2%

3、The power dissipation is limited by 150℃ junction temperature

4、The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.