M29W640DB datasheet(21/49 Pages) STMICROELECTRONICS

部件名	M29W640DB

功能描述	64 Mbit 8Mb x8 or 4Mb x16, Boot Block 3V Supply Flash Memory

PDF	49 Pages

Scroll/Zoom	100%

制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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M29W640DT, M29W640DB

Table 11. DC Characteristics

Note: 1. Sampled only, not 100% tested.

Symbol

Parameter

Test Condition

Min

Max

Unit

ILI

Input Leakage Current

≤ VIN ≤ VCC

±1

µA

ILO

Output Leakage Current

≤ VOUT ≤ VCC

±1

µA

ICC1

Supply Current (Read)

E = VIL, G = VIH,

f = 6MHz

ICC2

Supply Current (Standby)

E = VCC ±0.2V,

RP = VCC ±0.2V

100

µA

ICC3

Supply Current (Program/

Erase)

Program/Erase

Controller active

VPP/WP =

VIL or VIH

VPP/WP = VPP

VIL

Input Low Voltage

–0.5

0.8

VIH

Input High Voltage

0.7VCC

VCC +0.3

VPP

Voltage for

VPP/WP Program

Acceleration

VCC = 2.7V ±10%

11.5

12.5

IPP

Current for

VPP/WP Program

Acceleration

VCC = 2.7V ±10%

VOL

Output Low Voltage

IOL = 1.8mA

0.45

VOH

Output High Voltage

IOH = –100µA

VCC –0.4

VID

Identification Voltage

11.5

12.5

VLKO

(1)

Program/Erase Lockout Supply

Voltage

1.8

2.3

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