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M29W641DH 数据表(PDF) 33 Page - STMicroelectronics |
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M29W641DH 数据表(HTML) 33 Page - STMicroelectronics |
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33 / 42 page  33/42 M29W641DH, M29W641DL, M29W641DU Table 20. CFI Query System Interface Information Table 21. Device Geometry Definition Address Data Description Value 1Bh 0027h VCC Logic Supply Minimum Program/Erase voltage bit 7 to 4 BCD value in volts bit 3 to 0 BCD value in 100 mV 2.7V 1Ch 0036h VCC Logic Supply Maximum Program/Erase voltage bit 7 to 4 BCD value in volts bit 3 to 0 BCD value in 100 mV 3.6V 1Dh 00B5h VPP [Programming] Supply Minimum Program/Erase voltage bit 7 to 4 HEX value in volts bit 3 to 0 BCD value in 100 mV 11.5V 1Eh 00C5h VPP [Programming] Supply Maximum Program/Erase voltage bit 7 to 4 HEX value in volts bit 3 to 0 BCD value in 100 mV 12.5V 1Fh 0004h Typical timeout per single word program = 2n µs 16µs 20h 0000h Typical timeout for minimum size write buffer program = 2n µs NA 21h 000Ah Typical timeout per individual block erase = 2n ms 1s 22h 0000h Typical timeout for full chip erase = 2n ms NA 23h 0004h Maximum timeout for word program = 2n times typical 256 µs 24h 0000h Maximum timeout for write buffer program = 2n times typical NA 25h 0003h Maximum timeout per individual block erase = 2n times typical 8s 26h 0000h Maximum timeout for chip erase = 2n times typical NA Address Data Description Value 27h 0017h Device Size = 2n in number of bytes 8 MByte 28h 29h 0001h 0000h Flash Device Interface Code description x16 Async. 2Ah 2Bh 0000h 0000h Maximum number of bytes in multi-byte program or page = 2n NA 2Ch 0001h Number of Erase Block Regions. It specifies the number of regions containing contiguous Erase Blocks of the same size. 1 2Dh 2Eh 007Fh 0000h Region 1 Information Number of identical size erase block = 007Fh+1 128 2Fh 30h 0000h 0001h Region 1 Information Block size in Region 1 = 0100h * 256 byte 64 KByte |
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