AP3205P

55V N-Channel Enhancement Mode MOSFET

AP3205P Rve1.0

臺灣永源微電子科技有限公司

Description

The AP3205P is silicon N-channel Enhanced

VDMOSFETs, is obtained by the self-aligned planar Technology

which reduce the conduction loss, improve switching

performance and enhance the avalanche energy. The transistor

can be used in various power switching circuit for system

miniaturization and higher efficiency.

General Features

VDS =55V,ID=110A

RDS(ON) <8.0m

Ω@ VGS=10V

Application

Uninterruptible Power Supply(UPS)

Power Factor Correction (PFC)

Package Marking and Ordering Information

Product ID

Pack

Marking

Qty(PCS)

AP3205P

TO-220-3L

AP3205P XXX YYYY

1000

Absolute Maximum Ratings (TC=25℃ unless otherwise specified)

Symbol

Parameter

Max.

Units

VDSS

Drain-Source Voltage

55

V

VGSS

Gate-Source Voltage

±20

V

ID

Continuous Drain Current

TC = 25℃

110

A

TC = 100℃

80

A

IDM

Pulsed Drain Current note1

390

A

PD

Power Dissipation

TC = 25℃

200

W

RθJC

Thermal Resistance, Junction to Case

0.75

℃/W

TJ, TSTG

Operating and Storage Temperature Range

-55 to +175

℃