AP3400DI

20V N-Channel Enhancement Mode MOSFET

AP3400DI RVE1.0

永源微電子科技有限公司

Electrical Characteristics (TJ=25℃, unless otherwise noted)

Symbol

Parameter

Test Condition

Min.

Typ.

Max.

Units

V(BR)DSS

Drain-Source Breakdown Voltage

VGS=0V,ID=250μA

20

22

-

V

IDSS

Zero Gate Voltage Drain Current

VDS =20V, VGS = 0V,

-

-

1.0

μA

IGSS

Gate to Body Leakage Current

VDS =0V,VGS = ±12V

-

-

±100

nA

VGS(th)

Gate Threshold Voltage

VDS= VGS, ID=250μA

0.4

0.6

1.2

V

RDS(on)

Static Drain-Source on-Resistance note2

VGS =4.5V, ID =3A

-

45

55

mΩ

VGS =2.5V, ID =2A

-

62

85

Ciss

Input Capacitance

VDS =10V, VGS =0V, f =

1.0MHz

-

184

-

pF

Coss

Output Capacitance

-

38

-

pF

Crss

Reverse Transfer Capacitance

-

28

-

pF

Qg

Total Gate Charge

VDS =10V, ID =3A,

VGS =4.5V

-

2.7

-

nC

Qgs

Gate-Source Charge

-

0.4

-

nC

Qgd

Gate-Drain(“Miller”) Charge

-

0.5

-

nC

td(on)

Turn-on Delay Time

VDS=10V,

ID=3A, RGEN=3Ω,

VGS =4.5V

-

2.3

-

ns

tr

Turn-on Rise Time

-

3.1

-

ns

td(off)

Turn-off Delay Time

-

9.2

-

ns

tf

Turn-off Fall Time

-

2.5

-

ns

IS

Maximum Continuous Drain to Source Diode ForwardCurrent

-

-

3

A

ISM

Maximum Pulsed Drain to Source Diode Forward Current

-

-

12

A

VSD

Drain to Source Diode Forward Voltage

VGS = 0V, IS=3A

-

-

1.2

V

Note :

1、The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.

2、The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%

3、The power dissipation is limited by 150℃ junction temperature

4、The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.