AP3409AI

-30V P-Channel Enhancement Mode MOSFET

AP3409AI REV1.0

永源微電子科技有限公司

Electrical Characteristics (TC=25℃unless otherwise noted)

Symbol

Parameter

Conditions

Min.

Typ.

Max.

Unit

BVDSS

Drain-Source Breakdown Voltage

VGS=0V , ID=-250uA

-30

-33

---

V

RDS(ON)

Static Drain-Source On-Resistance2

VGS=-10V , ID=-7A

---

25

30

mΩ

VGS=-4.5V , ID=-5A

---

37

54

VGS(th)

Gate Threshold Voltage

VGS=VDS , ID =-250uA

-1.0

1.5

-2.5

V

IDSS

Drain-Source Leakage Current

VDS=-24V , VGS=0V , TJ=25

℃

---

---

1

uA

VDS=-24V , VGS=0V , TJ=55

℃

---

---

5

IGSS

Gate-Source Leakage Current

VGS=

±20V , VDS=0V

---

---

±100

nA

gfs

Forward Transconductance

VDS=-5V , ID=-7A

---

15

---

S

Rg

Gate Resistance

VDS=0V , VGS=0V , f=1MHz

15

30

Ω

Qg

Total Gate Charge (-4.5V)

VDS=-20V , VGS=-4.5V , ID=-7A

---

9.8

---

nC

Qgs

Gate-Source Charge

---

2.2

---

Qgd

Gate-Drain Charge

---

3.4

---

Td(on)

Turn-On Delay Time

VDD=-15V VGS=-10V RG=3.3Ω

ID=-5A

---

16.4

---

ns

Tr

Rise Time

---

20.2

---

Td(off)

Turn-Off Delay Time

---

55

---

Tf

Fall Time

---

10

---

Ciss

Input Capacitance

VDS=-15V , VGS=0V , f=1MHz

---

930

---

pF

Coss

Output Capacitance

---

148

---

Crss

Reverse Transfer Capacitance

---

115

---

IS

Continuous Source Current1,5

VG=VD=0V , Force Current

---

---

-8

A

VSD

Diode Forward Voltage2

VGS=0V , IS=-1A , TJ=25

℃

---

---

-1.2

V

Note :

1、The data tested by surface mo

unted on a 1 inch2 FR-4 board with 2OZ copper.

2、The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%

3、The power dissipation is limited by 150℃ junction temperature

4 、The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.