AP4435B

-30V P-Channel Enhancement Mode MOSFET

AP4435B RVE1.0

永源微電子科技有限公司

Description

The AP4435B uses advanced trench technology

to provide excellent RDS(ON), low gate charge and

operation with gate voltages as low as 4.5V. This

device is suitable for use as a

Battery protection or in other Switching application.

General Features

VDS = -30V ID =-9.3A

RDS(ON) <20mΩ @ VGS=-10V （Type：16mΩ）

Application

Lithium battery protection

Wireless impact

Mobile phone fast charging

Package Marking and Ordering Information

Product ID

Pack

Marking

Qty(PCS)

AP4435B

SOP-8L

AP4435B XXX YYYY

3000

Absolute Maximum Ratings (TC=25℃unless otherwise noted)

Symbol

Parameter

Rating

Units

VDS

Drain-Source Voltage

-30

V

VGS

Gate-Source Voltage

±20

V

ID@TA=25℃

Continuous Drain Current, VGS @ -10V1

-9.3

A

ID@TA=70℃

Continuous Drain Current, VGS @ -10V1

-7.0

A

IDM

Pulsed Drain Current2

-50

A

PD@TA=25℃

Total Power Dissipation4

3.1

W

PD@TA=70℃

Total Power Dissipation4

2

W

TSTG

Storage Temperature Range

-55 to 150

℃

TJ

Operating Junction Temperature Range

-55 to 150

℃

RθJA

Thermal Resistance Junction-Ambient 1(t≦ 10s)

33.8

℃

/W

RθJC

Thermal Resistance Junction-Case1

24

℃

/W