AP4606A datasheet(1/11 Pages) APME

部件名	AP4606A

功能描述	30V NP-Channel Enhancement Mode MOSFET

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制造商	APME [A POWER MICROELECTRONICS]

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AP4606A

30V N+P-Channel Enhancement Mode MOSFET

AP4606A REV1.1

永源微電子科技有限公司

Description

The AP4606A uses advanced trench technology

to provide excellent RDS(ON), low gate charge and

operation with gate voltages as low as 4.5V. This

device is suitable for use as a Battery protection

or in other Switching application.

General Features

VDS = 30V ID =8.8A

RDS(ON) < 22mΩ @ VGS=10V （Type：15mΩ）

VDS = -30V ID =-7.8A

RDS(ON) < 45mΩ @ VGS=-10V（Type：35mΩ）

Application

BLDC

Package Marking and Ordering Information

Product ID

Pack

Marking

Qty(PCS)

AP4606A

SOP-8L

AP4606A XXX YYYY

3000

Absolute Maximum Ratings (TC=25

℃unless otherwise noted)

Symbol

Parameter

N-Ch

P-Ch

Units

VDS

Drain-Source Voltage

30

-30

V

VGS

Gate-Source Voltage

±20

V

ID@TA=25℃

Continuous Drain Current, VGS @ 10V1

8.8

-7.8

A

ID@TA=70℃

Continuous Drain Current, VGS @ 10V1

5.5

-4.8

A

IDM

Pulsed Drain Current2

24

-24

A

EAS

Single Pulse Avalanche Energy3

26.6

37

mJ

IAS

Avalanche Current

12.7

10

A

PD@TA=25℃

Total Power Dissipation4

1.5

W

TSTG

Storage Temperature Range

-55 to 150

℃

TJ

Operating Junction Temperature Range

-55 to 150

℃

RθJA

Thermal Resistance Junction-Ambient 1

85

℃

/W

RθJC

Thermal Resistance Junction-Case1

60

℃

/W

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