SILICON PLANAR ZENER DIODES

1N5223B to 1N5279B

2.7V to 180V

DO- 35

Glass Axial Package

No Suffix +20% tolerance, Suffix 'A' +10% tolerance, and Suffix 'B' +5% tolerance

Device

Nominal

Test

Max Zener

(Note 1)

Voltage

Current

Voltage

Temp. Coeff.

θθVz(Note 3)

(A&B Suffix only)

V

mA

Ω

Ω

Ω

Ω

α

α V

1N5270B

91

1.4

400

2300

0.099

1N5271B

100

1.3

500

2600

0.099

1N5272B

110

1.1

750

3000

0.11

1N5273B

120

1.0

900

4000

0.11

1N5274B

130

0.95

1100

4500

0.11

1N5275B

140

0.90

1300

4500

0.11

1N5276B

150

0.85

1500

5000

0.11

1N5277B

160

0.80

1700

5500

0.11

1N5278B

170

0.74

1900

5500

0.11

1N5279B

180

0.68

2200

6000

0.11

NOTE 1:

The electrical characteristics are measured after allowing the device to stabilize for

20 seconds when mounted with a 9.525 mm (3/8") minimum lead length from the case.

NOTE 2:

The zener impedance is derived from the 50 Hz AC voltage, which results when AC current

breakdown curve, thereby, eliminating unstable units.

NOTE 3:

Temperature coefficient (

θθV

Test conditions for temperature coefficient are as follows.

T2=125ºC(1N5223A, B thru 1N5242A, B )

T2=125ºC(1N5243A, B thru 1N5279A, B )

Device to be temperature stabilized with current applied prior to reading brekdown voltage

at the specified ambient Rwmerature

1N5223B_5279B Rev_2 080605E

69

76

84

91

0.1

Max Zener

Max Reverse Leakage Current

Impedance

0.1

0.1

A & B Suffix only

(Note 2)

µµA

V

0.1

0.1

0.1

0.1

0.1

99

106

114

122

129

137

0.1

0.1

Continental Device India Limited

Data Sheet

Page 3 of 5