M36DR432AD datasheet(28/52 Pages) STMICROELECTRONICS

部件名	M36DR432AD

功能描述	32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256Kb x16 SRAM, Multiple Memory Product

PDF	52 Pages

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制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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M36DR432AD, M36DR432BD

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Table 17. SRAM DC Characteristics

(TA = –40 to 85°C; VDDF = VDDS = 1.65V to 2.2V)

Note: 1.

IDDES and IDDWS are specified with device deselected. If device is read while in erase suspend, current draw is sum of IDDES

and

IDDR. If the device is read while in program suspend, current draw is the sum of IDDWS and IDDR.

2. VIN = VIL or VIH

Symbol

Parameter

Test Condition

Min

Typ

Max

Unit

IOZ

Output Leakage

Current

≤ VOUT ≤ VDDS, output disabled

-1

µA

IIX

Input Load Current

≤ VIN ≤ VDDS

-1

±1

µA

IDDS

VDD Standby

Current

≥ VDDS – 0.2V, VIN ≥ VDDS – 0.2V

or VIN ≤ 0.2V, f=0

VDDS = 2.2V

110

µA

IDD

Supply Current

IOUT = 0 mA, f = fMAX = 1/tRC, CMOS levels

VDDS = 2.2V

IOUT = 0 mA, f = 0Hz

CMOS levels

VIL

Input Low Voltage

VDDS = 1.65V

–0.5

0.4

VIH

Input High Voltage

VDDS = 2.2V

1.4

VDDS +0.2V

VOL

Output Low Voltage

VDDS = 1.65V

IOL = 0.1µA

0.2

VOH

Output High Voltage

VDDS = 1.65V

IOH = –0.1µA

1.4

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