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M29W400 数据表(PDF) 1 Page - STMicroelectronics

部件名 M29W400
功能描述  4 Mbit 512Kb x8 or 256Kb x16, Boot Block Low Voltage Single Supply Flash Memory
PDF  22 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

M29W400 数据表(HTML) 1 Page - STMicroelectronics

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April 2000
M29W400BT
M29W400BB
4 Mbit (512Kb x8 or 256Kb x16, Boot Block)
Low Voltage Single Supply Flash Memory
s
SINGLE 2.7 to 3.6V SUPPLY VOLTAGE for
PROGRAM, ERASE and READ OPERATIONS
s
ACCESS TIME: 55ns
s
PROGRAMMING TIME
–10
µs per Byte/Word typical
s
11 MEMORY BLOCKS
– 1 Boot Block (Top or Bottom Location)
– 2 Parameter and 8 Main Blocks
s
PROGRAM/ERASE CONTROLLER
– Embedded Byte/Word Program algorithm
– Embedded Multi-Block/Chip Erase algorithm
– Status Register Polling and Toggle Bits
– Ready/Busy Output Pin
s
ERASE SUSPEND and RESUME MODES
– Read and Program another Block during
Erase Suspend
s
UNLOCK BYPASS PROGRAM COMMAND
– Faster Production/Batch Programming
s
TEMPORARY BLOCK UNPROTECTION
MODE
s
LOW POWER CONSUMPTION
– Standby and Automatic Standby
s
100,000 PROGRAM/ERASE CYCLES per
BLOCK
s
20 YEARS DATA RETENTION
– Defectivity below 1 ppm/year
s
ELECTRONIC SIGNATURE
– Manufacturer Code: 0020h
– Top Device Code M29W400BT: 00EEh
– Bottom Device Code M29W400BB: 00EFh
Figure 1. Logic Diagram
AI02934
18
A0-A17
W
DQ0-DQ14
VCC
M29W400BT
M29W400BB
E
VSS
15
G
RP
DQ15A–1
BYTE
RB
44
1
TSOP48 (N)
12 x 20mm
SO44 (M)


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