ISCFM8116

eq APTC60AM18SCG

SiC MOSFET Power Module

www.iscsemi.com

2

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal Resistance, Junction to Case

0.15

℃

/W

ELECTRICAL CHARACTERISTICS (TC=25℃)

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

V(BR)DSS

Drain-Source Breakdown Voltage

VGS= 0V, ID= 0.25mA

600

--

--

V

IDSS

Zero Gate Voltage Drain Current

VDS= 600V, VGS= 0V

--

--

100

uA

IGSS

Gate-Body Leakage Current

VGS= ±20V, VDS= 0V

--

--

±

400

nA

VGS(th)

Gate Threshold Voltage

VDS= VGS, ID= 0.25mA

2.1

--

3.9

V

RDS(on)

Drain-Source On-Resistance

VGS= 10V, ID= 71.5A

--

--

18

mΩ

SERIES DIODE RATINGS AND CHARACTERISTICS (TC =25℃ unless otherwise specified)

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

VRRM

Repetitive Peak Reverse Voltage

600

--

--

V

IRRM

Peak Reverse Recovery Current

VR=600V

--

--

150

uA

IF

DC Forward Voltage

TC= 80℃

--

200

--

A

VF

Diode Forward Voltage

IF= 200A, VGE= 0V

--

--

2.0

V

trr

Reverse Recovery Time

IF= 200A, VR= 300V,

dIF/dt= 2800A/us

--

127

--

ns

Rth j-c

Thermal Resistance, Junction to Case for Diode

--

--

0.39

℃

/W