ISCD7091 datasheet(1/2 Pages) ISC

部件名	ISCD7091

功能描述	SiC Schottky Diode

PDF	2 Pages

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制造商	ISC [Inchange Semiconductor Company Limited]

网页	http://www.iscsemi.cn

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ISCD7091

eq DSC05120

SiC Schottky Diode

www.iscsemi.com

1

FEATURES

· Low Condition and Switching Loss

· High Temperature Application

· Fast Reverse Recovery

APPLICATIONS

· Power Factor Correction

· Power Inverters

· UPS, SMPS

ABSOLUTE MAXIMUM RATINGS(TC=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VRRM

Repetitisve Peak Reverse Voltage

1200

V

IF(AV)

Continuous Forward Current

5

A

IFSM

Non-Repetitive Forward Surge Current

60

A

TJ

Max. Junction Temperature

175

℃

Tstg

Storage Temperature Range

-55~175

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal Resistance,Junction to Case

6

℃

/W

ELECTRICAL CHARACTERISTICS

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP

MAX

UNIT

VF

Diode Forward Voltage

IF= 5A, TJ= 25℃

--

1.7

V

IR

Reverse current

VR= 1200V, TJ= 25℃

--

190

uA

类似零件编号 - ISCD7091

制造商	部件名	数据表	功能描述
Inchange Semiconductor ...	ISCD7090	289Kb / 2P	SiC Schottky Diode
	ISCD7092	289Kb / 2P	SiC Schottky Diode
	ISCD7093	379Kb / 2P	SiC Schottky Diode
	ISCD7094	419Kb / 2P	SiC Schottky Diode
	ISCD7095	307Kb / 3P	Silicon Carbide Schottky Diode

More results

类似说明 - ISCD7091

制造商	部件名	数据表	功能描述
BASIC SEMICONDUCTOR	B1D06065F	1Mb / 7P	SiC Schottky Diode Rev. 2.3
	B1D06065KF	1Mb / 7P	SiC Schottky Diode Rev. 2.2
	B1D08065KS	604Kb / 7P	SiC Schottky Diode Rev. 0.1
	B1D10065E	2Mb / 7P	SiC Schottky Diode Rev. 1.2
	B1D10065F	820Kb / 7P	SiC Schottky Diode Rev. 1.2
	B1D10065H	1Mb / 7P	SiC Schottky Diode Rev. 2.4
	B1D10065K	1Mb / 7P	SiC Schottky Diode Rev. 2.2
	B1D12065K	1Mb / 7P	SiC Schottky Diode Rev. 1.3
	B1D15065K	1Mb / 7P	SiC Schottky Diode Rev. 1.4
	B1D30065HC	1Mb / 7P	SiC Schottky Diode Rev. 0.2