FFSP3065B datasheet(1/2 Pages) ISC

部件名	FFSP3065B

功能描述	Silicon Carbide Schottky Diode

PDF	2 Pages

Scroll/Zoom	100%

制造商	ISC [Inchange Semiconductor Company Limited]

网页	http://www.iscsemi.cn

标志

1 / 2 page

ISCD7080

eq

FFSP3065B

Silicon Carbide Schottky Diode

www.iscsemi.com

1

FEATURES

· Ease of Paralleling

· Positive Temperature Coefficient

· High Surge Current Capacity

APPLICATIONS

· SMPS

· General Purpose

· Power Switching Circuit

ABSOLUTE MAXIMUM RATINGS(TC=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VRRM

Repetitisve Peak Reverse Voltage

650

V

IF

Continuous ForwardCurrent

Tc=25℃

80

A

Tc=150℃

30

IFSM

Non-Repetitive Forward Surge

Current

Half−Sine Pulse,tp = 10 ms

234

A

Ptot

Power Dissipation

Tc=25℃

310

W

TJ

Junction Temperature

-55~175

℃

Tstg

Storage Temperature Range

-55~175

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

TYP

UNIT

Rth j-c

Thermal Resistance,Junction to Case

0.48

℃

/W

类似零件编号 - FFSP3065B

制造商	部件名	数据表	功能描述
ON Semiconductor	FFSP3065A	239Kb / 6P	Silicon Carbide Schottky Diode August, 2020 ??Rev. 3

More results

类似说明 - FFSP3065B

制造商	部件名	数据表	功能描述
Infineon Technologies A...	SIDC19D60SIC3	54Kb / 4P	Silicon Carbide Schottky Diode 22.04.2004
	SDD04S60	280Kb / 9P	Silicon Carbide Schottky Diode 2004-02-11
	SDP20S30	216Kb / 8P	Silicon Carbide Schottky Diode 2001-09-07
	SDT05S60	353Kb / 8P	Silicon Carbide Schottky Diode Rev. 2.1 2005-02-17
	SDP06S60	644Kb / 9P	Silicon Carbide Schottky Diode Rev. 2.4 2008-06-02
Cree, Inc	C3D08065A	544Kb / 6P	Silicon Carbide Schottky Diode
	C4D08120E	643Kb / 6P	Silicon Carbide Schottky Diode
	C3D08065I	509Kb / 6P	Silicon Carbide Schottky Diode
	C3D03065E	941Kb / 6P	Silicon Carbide Schottky Diode
	E4D20120G	2Mb / 6P	Silicon Carbide Schottky Diode Silicon Carbide Schottky Diode