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FE2G 数据表(PDF) 1 Page - Diotec Semiconductor

部件名 FE2G
功能描述  Superfast Recovery Rectifier Diodes Gleichrichterdioden mit superschnellem Sperrverzug
PDF  3 Pages
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制造商  DIOTEC [Diotec Semiconductor]
网页  http://www.diotec.com
标志 DIOTEC - Diotec Semiconductor

FE2G 数据表(HTML) 1 Page - Diotec Semiconductor

  FE2G Datasheet HTML 1Page - Diotec Semiconductor FE2G Datasheet HTML 2Page - Diotec Semiconductor FE2G Datasheet HTML 3Page - Diotec Semiconductor  
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FE2A ... FE2G
FE2A ... FE2G
Superfast Recovery Rectifier Diodes
Gleichrichterdioden mit superschnellem Sperrverzug
IFAV = 2 A
VF
< 0.98...1.3 V
Tjmax = 175°C
VRRM = 50...400 V
IFSM = 50/55 A
trr
< 50 ns
Version 2023-09-08
~DO-15
~DO-204AC
SPICE Model & STEP File 1)
Marking
Type /Typ
HS Code 85411000
Typical Applications
Rectification of higher frequencies,
High speed switching
Commercial / industrial grade 1)
Suffix -Q: AEC-Q101 compliant 1)
Suffix -AQ: AEC-Q101 qualified 1)
Typische Anwendungen
Gleichrichtung hoher Frequenzen
Schnelles Schalten
Standardausführung 1)
Suffix -Q: AEC-Q101 konform 1)
Suffix -AQ: AEC-Q101 qualifiziert 1)
Features
High forward surge current
Compliant to RoHS (exemp. 7a),
REACH, Conflict Minerals 1)
Besonderheiten
Hohe Stoßstromfestigkeit
Konform zu RoHS (Ausn. 7a),
REACH, Konfliktmineralien 1)
Mechanical Data 1)
Mechanische Daten 1
)
Taped in ammo pack
4000
Gegurtet in Ammo-Pack
Weight approx.
0.4 g
Gewicht ca.
Case material
UL 94V-0
Gehäusematerial
Solder & assembly conditions
260°C/10s
Löt- und Einbaubedingungen
MSL N/A
Maximum ratings 2)
Grenzwerte 2)
Type
Typ
Repetitive peak reverse voltage
Periodische Spitzensperrspannung
VRRM [V]
Surge peak reverse voltage
Stoßspitzensperrspannung
VRSM [V]
FE2A
50
50
FE2B
100
100
FE2D
200
200
FE2G
400
400
Max. average forward rectified current, R-load
Dauergrenzstrom in Einwegschaltung mit R-Last
TA = 75°C
IFAV
2 A 3)
Repetitive peak forward current
Periodischer Spitzenstrom
f > 15 Hz
IFRM
20 A 3)
Peak forward surge current
Stoßstrom in Fluss-Richtung
Half sine-wave
Sinus-Halbwelle
50 Hz (10 ms)
60 Hz (8.3 ms)
IFSM
50 A
55 A
Rating for fusing
Grenzlastintegral
t < 10 ms
i2t
12.5 A2s
Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
Tj
TS
-50...+175°C
-50...+175°C
1
Please note the detailed information on our website or at the beginning of the data book
Bitte beachten Sie die detaillierten Hinweise auf unserer Internetseite bzw. am Anfang des Datenbuches
2
TA = 25°C unless otherwise specified – TA = 25°C wenn nicht anders angegeben
3
Valid, if leads are kept at ambient temperature at a distance of 10 mm from case
Gültig, wenn die Anschlussdrähte in 10 mm Abstand vom Gehäuse auf Umgebungstemperatur gehalten werden
© Diotec Semiconductor AG
http://www.diotec.com/
1
Pb
RoHS


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