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M48T512Y 数据表(PDF) 13 Page - STMicroelectronics

部件名 M48T512Y
功能描述  3.3V-5V 4 Mbit 512Kb x8 TIMEKEEPER SRAM
PDF  21 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

M48T512Y 数据表(HTML) 13 Page - STMicroelectronics

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M48T512Y, M48T512V*
Figure 9. Calibration Waveform
VCC Noise And Negative Going Transients
ICC transients, including those produced by output
switching, can produce voltage fluctuations, re-
sulting in spikes on the VCC bus. These transients
can be reduced if capacitors are used to store en-
ergy, which stabilizes the VCC bus. The energy
stored in the bypass capacitors will be released as
low going spikes are generated or energy will be
absorbed when overshoots occur.
A ceramic bypass capacitor value of 0.1µF is rec-
ommended in order to provide the needed filtering.
In addition to transients that are caused by normal
SRAM operation, power cycling can generate neg-
ative voltage spikes on VCC that drive it to values
below VSS by as much as one volt. These negative
spikes can cause data corruption in the SRAM
while in battery backup mode. To protect from
these voltage spikes, ST recommends connecting
a schottky diode from VCC to VSS (cathode con-
nected to VCC, anode to VSS). (Schottky diode
1N5817 is recommended for through hole and
MBRS120T3 is recommended for surface mount).
Figure 10. Supply Voltage Protection
AI00594B
NORMAL
POSITIVE
CALIBRATION
NEGATIVE
CALIBRATION
AI02169
VCC
0.1
µF
DEVICE
VCC
VSS



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