ACPDQ03C3V3HT-HF

Comchip Technology CO., LTD.

RoHS Device

Halogen Free

Features

- Bi-directional ESD protection.

SMD ESD Protection Diode

- Low leakage current.

- Low clamping voltage.

Electrical Characteristics (at TA=25°C unless otherwise noted)

Symbol

Typ

Parameter

Min

Max

Unit

Conditions

Breakdown voltage

VBR

V

IT = 1mA

V

Working peak reverse voltage

VRWM

Maximum Rating (at TA=25°C unless otherwise noted)

Symbol

Parameter

Value

Unit

Conditions

Peak pulse power

PPP

W

Operating temperature range

Tj

°C

Storage temperature range

TSTG

°C

kV

IEC 61000-4-2(air)

IEC 61000-4-2(contact)

ESD capability

-55 to +125

Peak pulse current

IPP

A

TP = 8/20µs

TP = 8/20µs

±30

ESD

-55 to +150

Reverse leakage current

IR

µA

VRWM = 3.3V

Clamping voltage

V

Junction capacitance

CJ

pF

VR = 0V, f = 1MHz

IPP = 1A, TP = 8/20µs

VC

VC

IPP = 15A, TP = 8/20µs

0402C-03/SOT-883

Dimensions in inches and (millimeter)

1

2

3

0.041(1.05)

0.037(0.95)

0.026(0.65)

0.022(0.55)

0.022(0.55)

0.018(0.45)

0.000(0.00)

0.002(0.05)

0.017(0.43)

0.021(0.53)

0.011(0.28)

0.007(0.18)

0.026(0.65)

BSC.

0.007(0.18)

0.003(0.08)

BSC.

0.014(0.35)

REV:A

Page 1

AQW-G7080

3.3

3.7

1

5

7

8

10

36

15

150

Circuit Diagram

3

2

1

Mechanical data

- Case: 0402C-03/SOT-883 package,

molded plastic.

- Mounting position: Any.

- Terminals: Solderable per MIL-STD-750,

method 2026.

- AEC-Q101 Qualified & PPAP.