Comchip Technology CO., LTD.

RoHS Device

Halogen Free

SMD ESD Protection Diode

REV:A

Page 1

AQW-G7092

Dimensions in inches and (millimeter)

0402C/SOD-923F

0.041(1.05)

0.037(0.95)

0.026(0.65)

0.022(0.55)

0.022(0.55)

0.018(0.45)

0.001(0.02)

Max.

0.022(0.55)

0.018(0.45)

0.026(0.65)

BSC.

0.012(0.30)

0.008(0.20)

Mechanical data

- Case: 0402C/SOD-923F standard package,

molded plastic.

- Terminals: Gold plated, solderable per

MIL-STD-750, method 2026.

- Mounting position: Any.

Features

- Low leakage current.

- Surface mount package.

- Bi-directional ESD protection.

High-Reliability and High-Performance

Circuit Diagram

ACPDQC3V3PHT-HF

Electrical Characteristics (at TA=25°C unless otherwise noted)

Symbol

Typ

Parameter

Min

Max

Unit

Conditions

Breakdown voltage

VBR

V

IT = 1mA

V

Working peak reverse voltage

VRWM

Maximum Rating (at TA=25°C unless otherwise noted)

Symbol

Parameter

Value

Unit

Conditions

Peak pulse power

PPP

W

Operating junction temperature range

TJ

°C

Storage temperature range

TSTG

°C

kV

IEC 61000-4-2(air)

IEC 61000-4-2(contact)

ESD capability

Peak pulse current

IPP

A

TP = 8/20µs

TP = 8/20µs

ESD

Reverse leakage current

IR

µA

VRWM = 3.3V

Clamping voltage

V

IPP = 1A, TP = 8/20µs

VC

VC

IPP = 26A, TP = 8/20µs

-55 to +150

3.3

3.2

1

-55 to +125

4

7

9

234

26

Junction capacitance

CJ

pF

VR = 0V, f = 1MHz

40

±30

6

- AEC-Q101 Qualified & PPAP.