DMTH6016LFDFW

Datasheet number: DS39885 Rev. 2 - 2

2 of 7

www.diodes.com

February 2018

© Diodes Incorporated

DMTH6016LFDFW

Maximum Ratings (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Unit

Drain-Source Voltage

VDSS

60

V

Gate-Source Voltage

VGSS

±20

V

Continuous Drain Current (Note 6) VGS = 10V

TA = +25°C

TA = +100°C

ID

9.4

6.6

A

Pulsed Drain Current (10

μs Pulse, Duty Cycle = 1%)

IDM

70

A

Continuous Source-Drain Diode Current (Note 6)

IS

3.0

A

Pulsed Source-Drain Diode Current (10

μs Pulse, Duty Cycle = 1%)

ISM

70

A

Avalanche Current, L = 0.1mH (Note 7)

IAS

15.3

A

Avalanche Energy, L = 0.1mH (Note 7)

EAS

11.7

mJ

Thermal Characteristics

Characteristic

Symbol

Value

Unit

Total Power Dissipation (Note 5)

TA = +25°C

PD

1.06

W

Thermal Resistance, Junction to Ambient (Note 5)

Steady State

RθJA

141

°C/W

Total Power Dissipation (Note 6)

TA = +25°C

PD

2.3

W

Thermal Resistance, Junction to Ambient (Note 6)

Steady State

RθJA

63

°C/W

Thermal Resistance, Junction to Case (Note 6)

TC = +25°C

RθJC

9.6

°C/W

Operating and Storage Temperature Range

TJ, TSTG

-55 to +175

°C

Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 8)

Drain-Source Breakdown Voltage

BVDSS

60

—

—

V

VGS = 0V, ID = 250μA

Zero Gate Voltage Drain Current

IDSS

—

—

1

µA

VDS = 48V, VGS = 0V

Gate-Source Leakage

IGSS

—

—

±100

nA

VGS = ±20V, VDS = 0V

ON CHARACTERISTICS (Note 8)

Gate Threshold Voltage

VGS(TH)

1

—

3

V

VDS = VGS, ID = 250μA

Static Drain-Source On-Resistance

RDS(ON)

—

13.8

18

m

Ω

VGS = 10V, ID = 10A

20.3

27.5

VGS = 4.5V, ID = 6A

Diode Forward Voltage

VSD

—

—

1.0

V

VGS = 0V, IS = 10A

DYNAMIC CHARACTERISTICS (Note 9)

Input Capacitance

Ciss

—

925

—

pF

VDS = 30V, VGS = 0V,

f = 1MHz

Output Capacitance

Coss

—

242

—

Reverse Transfer Capacitance

Crss

—

25.4

—

Gate Resistance

Rg

—

1.3

—

Ω

VDS = 0V, VGS = 0V, f = 1MHz

Total Gate Charge (VGS = 4.5V)

Qg

—

7.5

—

nC



VDS = 30V, ID = 10A

Total Gate Charge (VGS = 10V)

Qg

—

15.3

—

Gate-Source Charge

Qgs

—

2.6

—

Gate-Drain Charge

Qgd

—

3.5

—

Turn-On Delay Time

tD(ON)

—

3.2

—

ns

VGS = 10V, VDS = 30V,

Rg = 6Ω, ID = 10A

Turn-On Rise Time

tR

—

4.2

—

Turn-Off Delay Time

tD(OFF)

—

14.5

—

Turn-Off Fall Time

tF

—

7.2

—

Reverse Recovery Time

tRR

—

20.8

—

ns

IF = 10A, di/dt = 100A/µs

Reverse Recovery Charge

QRR

—

11.4

—

nC

Notes:

5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.

6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.

7. IAS and EAS ratings are based on low frequency and duty cycles to keep TJ = +25°C.

8. Short duration pulse test used to minimize self-heating effect.

9. Guaranteed by design. Not subject to product testing.