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M29F200 数据表(PDF) 2 Page - STMicroelectronics

部件名 M29F200
功能描述  2 Mbit 256Kb x8 or 128Kb x16, Boot Block Single Supply Flash Memory
PDF  22 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

M29F200 数据表(HTML) 2 Page - STMicroelectronics

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M29F200BT, M29F200BB
2/22
Figure 2A. TSOP Connections
DQ3
DQ9
DQ2
A6
DQ0
W
A3
RB
DQ6
A8
A9
DQ13
NC
A10
DQ14
A2
DQ12
DQ10
DQ15A–1
VCC
DQ4
DQ5
A7
DQ7
NC
NC
AI02913
M29F200BT
M29F200BB
12
1
13
24
25
36
37
48
DQ8
NC
NC
A1
NC
A4
A5
DQ1
DQ11
G
A12
A13
A16
A11
BYTE
A15
A14
VSS
E
A0
RP
VSS
Figure 2B. SO Connections
G
DQ0
DQ8
A3
A0
E
VSS
A2
A1
A13
VSS
A14
A15
DQ7
A12
A16
BYTE
DQ15A–1
DQ5
DQ2
DQ3
VCC
DQ11
DQ4
DQ14
A9
W
RB
A4
NC
RP
A7
AI02914
M29F200BT
M29F200BB
8
2
3
4
5
6
7
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
22
20
19
18
17
DQ1
DQ9
A6
A5
DQ6
DQ13
44
39
38
37
36
35
34
33
A11
A10
DQ10
21
DQ12
40
43
1
42
41
NC
A8
Table 1. Signal Names
A0-A16
Address Inputs
DQ0-DQ7
Data Inputs/Outputs
DQ8-DQ14
Data Inputs/Outputs
DQ15A–1
Data Input/Output or Address Input
E
Chip Enable
G
Output Enable
W
Write Enable
RP
Reset/Block Temporary Unprotect
RB
Ready/Busy Output
BYTE
Byte/Word Organization Select
VCC
Supply Voltage
VSS
Ground
NC
Not Connected Internally
SUMMARY DESCRIPTION
The M29F200B is a 2 Mbit (256Kb x8 or 128Kb
x16) non-volatile memory that can be read, erased
and reprogrammed. These operations can be per-
formed using a single 5V supply. On power-up the
memory defaults to its Read mode where it can be
read in the same way as a ROM or EPROM. The
M29F200B is fully backward compatible with the
M29F200.
The memory is divided into blocks that can be
erased independently so it is possible to preserve
valid data while old data is erased. Each block can
be protected independently to prevent accidental
Program or Erase commands from modifying the
memory. Program and Erase commands are writ-
ten to the Command Interface of the memory. An
on-chip Program/Erase Controller simplifies the
process of programming or erasing the memory by
taking care of all of the special operations that are
required to update the memory contents. The end
of a program or erase operation can be detected
and any error conditions identified. The command
set required to control the memory is consistent
with JEDEC standards.



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