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M29F400 数据表(PDF) 1 Page - STMicroelectronics |
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M29F400 数据表(HTML) 1 Page - STMicroelectronics |
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1 / 22 page ![]() 1/22 July 2000 M29F400BT M29F400BB 4 Mbit (512Kb x8 or 256Kb x16, Boot Block) Single Supply Flash Memory s SINGLE 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS s ACCESS TIME: 45ns s PROGRAMMING TIME – 8µs per Byte/Word typical s 11 MEMORY BLOCKS – 1 Boot Block (Top or Bottom Location) – 2 Parameter and 8 Main Blocks s PROGRAM/ERASE CONTROLLER – Embedded Byte/Word Program algorithm – Embedded Multi-Block/Chip Erase algorithm – Status Register Polling and Toggle Bits – Ready/Busy Output Pin s ERASE SUSPEND and RESUME MODES – Read and Program another Block during Erase Suspend s UNLOCK BYPASS PROGRAM COMMAND – Faster Production/Batch Programming s TEMPORARY BLOCK UNPROTECTION MODE s LOW POWER CONSUMPTION – Standby and Automatic Standby s 100,000 PROGRAM/ERASE CYCLES per BLOCK s 20 YEARS DATA RETENTION – Defectivity below 1 ppm/year s ELECTRONIC SIGNATURE – Manufacturer Code: 0020h – Top Device Code M29F400BT: 00D5h – Bottom Device Code M29F400BB: 00D6h 44 1 TSOP48 (N) 12 x 20mm SO44 (M) Figure 1. Logic Diagram AI02904 18 A0-A17 W DQ0-DQ14 VCC M29F400BT M29F400BB E VSS 15 G RP DQ15A–1 BYTE RB |
类似零件编号 - M29F400 |
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类似说明 - M29F400 |
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