MF12, MF25 & MF50 Series
Metal Film Resistors
Page 2
10/05/05 V1.0
Current Noise Level
Derating Curve
Load Life
Performance Specification
Characteristics
Test Methods
Limits
Temperature
coefficient
Natural resistance change per temperature degree centigrade.
R2 - R1
R1(t2-t1)
R1: Resistance value at room temperature (t1)
R2: Resistance value at room temperature plus 100°C (t2).
Within the temperature coefficient specified
below
Maximum TCR
±50ppm/°C
Dielectric
withstanding
voltage
Resistors shall be clamped in the trough of a 90° metallic
V-block and shall be tested at AC potential respectively
specified in the above list for 60 +10/-0 seconds.
No evidence of flashover mechanical
damage, arcing or insulation break down.
Temperature
cycling
Resistance change after continuous five cycles for duty cycle
specified
Resistance change rate is ±(1% +0.05
Ω).
No evidence of mechanical damage.
Step
Temperature
Time
1
-55°C ±3°C
30 minutes
2
Room temperature
10-15 minutes
3
+155°C ±3°C
30 minutes
4
Room temperature
10-15 minutes
Short-time
overload
Permanent resistance change after the application of a
potential of 2.5 times RCWV for 5 seconds.
Resistance change rate is ±(0.5% +0.05
Ω).
No evidence of mechanical damage.
Pulse overload
Resistance change after 10,000 cycles (1 second "on", 25
seconds "off") at 4 times RCWV.
Resistance change rate is ±(1% +0.05
Ω).
No evidence of mechanical damage.
X 10
6 (ppm/°C)
100
Ω
1K
Ω
10K
Ω
100K
Ω
1M
Ω
+0.8
+0.4
0
-0.4
-0.8
Nominal resistance (
Ω)
Ambient temperature (°C)
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