M93C86-R datasheet(36/37 Pages) STMICROELECTRONICS

36 / 37 page

Revision history

M93C86, M93C76, M93C66, M93C56, M93C46

36/37

31-Jul-2007

Document reformatted. TSSOP8 3 × 3 mm (DS) package removed.

Erase/Write Enable (EWEN) instruction replaced by Write Enable

(WEN). Erase/Write Disable (EWDS) instruction replaced by Write

Disable (WDS).

Section 7: Initial delivery state modified, ACTIVE POWER AND

STANDBY POWER MODES section removed.

ICC1 test conditions modified in Table 15, Table 16, Table 17, Table 18

and Table 19. Note 1 added to Table 15.

tW parameter description modified in Table 20, Table 21, Table 22 and

Table 23..

SO8 narrow and UFDFPN8 package specifications updated (see

Section 12: Package mechanical data).

Table 29, Table 30, Table 31, Table 32 and Table 33 added.

Blank option removed under Plating technology in Table 27: TSSOP8 –

8 lead thin shrink small outline, package mechanical data.

Section 2: Connecting to the serial bus added. Device grade 7 removed.

29-Jan-2007

Small text changes.

M93C76-R root part number added.

Section 2: Connecting to the serial bus modified (pull-down resitor

added to Figure 3: Bus master and memory devices on the serial bus

and paragraph added).

Section 3.1.2: Power-up conditions corrected.

TLEAD modified in Table 8: Absolute maximum ratings.

VOH min guaranteed at a higher value in DC characteristics tables 15,

16, 17 and 18.

M93C56-R is also offered in TSSOP8 package (see Table 30).

Package mechanical inch values calculated from mm and rounded to 4

decimal digits in Section 12: Package mechanical data

TSSOP8 (DW) package specifications updated.

Table 34.

Document revision history (continued)

Date

Revision

Changes

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