* For higher guaranteed values, please consult us.

Note : MSS40-1400

°C is defined at 1200 V

- dV/dt at Tj = 125

°C is defined at 67% of 1200 V

GATE CHARACTERISTICS (maximum values)

PGM =50 W (tp =20 µs)

PG (AV)=1 W

IFGM = 4 A (tp = 20 µs) VRGM = 5V.

ELECTRICAL CHARACTERISTICS

Symbol

Parameter

Value

Unit

Rth (j-c)

Junction to case

DC

1

°C/W

AC

0.6

Rth (c-h)

Contact (case to heatsink) (4)

0.05

°C/W

(4) With contact grease utilisation

THERMAL RESISTANCES

Symbol

Test Conditions

Value

Unit

IGT

VD=12V

(DC)

RL=33Ω

Tj=25

°C

MAX

50

mA

VGT

VD=12V

(DC)

RL=33Ω

Tj=25

°C

MAX

1.5

V

VGD

VD=VDRM RL=3.3kΩ

Tj=125

°C

MIN

0.2

V

tgt

VD=VDRM IG = 500mA

dIG/dt = 3A/µs

Tj=25

°C

TYP

2

µs

IL

IG=1.2 IGT

Tj=25

°C

TYP

60

mA

MAX

120

IH

IT= 0.5A gate open

Tj=25

°C

TYP

40

mA

MAX

80

VTM

ITM= 80A tp= 380µs

Tj=25

°C

MAX

1.7

V

IDRM

IRRM

VDRM Rated

VRRM Rated

Tj=25

°C

MAX

0.05

mA

Tj=125

°C

MAX

10

tq

IT= 80A VR=75V VD=67%VDRM

dI/dt=30A/

µs dV/dt=20V/µs Gate open

Tj=125

°C

TYP

100

µs

dV/dt *

Linear slope up to VD=67%VDRM

gate open

Tj=125

°C

MIN

500

V/

µs

MSS40

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