18B20 datasheet(20/22 Pages) DALLAS

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DS18B20

20 of 22

AC ELECTRICAL CHARACTERISTICS—NV MEMORY

(-55°C to +100°C; VDD = 3.0V to 5.5V)

PARAMETER

SYMBOL

CONDITIONS

MIN

TYP

MAX

UNITS

NV Write Cycle Time

tWR

EEPROM Writes

NEEWR

-55°C to +55°C

50k

writes

EEPROM Data Retention

tEEDR

-55°C to +55°C

years

AC ELECTRICAL CHARACTERISTICS

(-55°C to +125°C; VDD = 3.0V to 5.5V)

PARAMETER

SYMBOL

CONDITIONS

MIN

TYP

MAX

UNITS

NOTES

9-bit resolution

93.75

10-bit resolution

187.5

11-bit resolution

375

Temperature Conversion

Time

tCONV

12-bit resolution

750

Time to Strong Pullup On

tSPON

Start Convert T

Command Issued

μs

Time Slot

tSLOT

120

μs

Recovery Time

tREC

μs

Write 0 Low Time

tLOW0

120

μs

Write 1 Low Time

tLOW1

μs

Read Data Valid

tRDV

μs

Reset Time High

tRSTH

480

μs

Reset Time Low

tRSTL

480

μs

1,2

Presence-Detect High

tPDHIGH

μs

Presence-Detect Low

tPDLOW

240

μs

Capacitance

CIN/OUT

NOTES:

1) See the timing diagrams in Figure 18.

2) Under parasite power, if tRSTL > 960μs, a power-on reset may occur.

Figure 17. Typical Performance Curve

DS18B20 Typical Error Curve

-0.5

-0.4

-0.3

-0.2

-0.1

0.1

0.2

0.3

0.4

0.5

10203040506070

Temperature (°C)

Mean Error

+3s Error

-3s Error

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