数据搜索系统，热门电子元器件搜索
  Chinese  ▼
ALLDATASHEETCN.COM

X  

预览 PDF HTML

APM32F103T8U6-R 数据表(PDF) 32 Page - Geehy Semiconductor Co., Ltd.

部件名 APM32F103T8U6-R
功能描述  Arm® Cortex® -M3 based 32-bit MCU
PDF  78 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
制造商  GEEHY [Geehy Semiconductor Co., Ltd.]
网页  https://global.geehy.com/
标志 GEEHY - Geehy Semiconductor Co., Ltd.

APM32F103T8U6-R 数据表(HTML) 32 Page - Geehy Semiconductor Co., Ltd.

Back Button APM32F103T8U6-R Datasheet HTML 28Page - Geehy Semiconductor Co., Ltd. APM32F103T8U6-R Datasheet HTML 29Page - Geehy Semiconductor Co., Ltd. APM32F103T8U6-R Datasheet HTML 30Page - Geehy Semiconductor Co., Ltd. APM32F103T8U6-R Datasheet HTML 31Page - Geehy Semiconductor Co., Ltd. APM32F103T8U6-R Datasheet HTML 32Page - Geehy Semiconductor Co., Ltd. APM32F103T8U6-R Datasheet HTML 33Page - Geehy Semiconductor Co., Ltd. APM32F103T8U6-R Datasheet HTML 34Page - Geehy Semiconductor Co., Ltd. APM32F103T8U6-R Datasheet HTML 35Page - Geehy Semiconductor Co., Ltd. APM32F103T8U6-R Datasheet HTML 36Page - Geehy Semiconductor Co., Ltd. Next Button
Zoom Inzoom in Zoom Outzoom out
 32 / 78 page
background image
w w w. g e e h y. c o m
P a g e 31
5.3.5
Static latch-up (LU)
When running a simple application (controlling the flashing of two LED through the I/O port),
the test sample is subject to false electromagnetic interference until an error is generated, and
the LED flashing indicates the generation of error. In order to evaluate the latch performance,
two complementary static latch tests need to be conducted on 6 samples:
 Provide power supply voltage exceeding the limit for each power supply pin.
 Inject current on each input, output and configurable I/O pin.
This test conforms to EIA/JESD78E integrated circuit latch standard.
Table16Static Latch-up
Symbol
Parameter
Condition
Type
LU
Class of static
latch-up
TA=105℃, conforming to EIA/JESD78E
Class II A
Note: The samples are measured by a third-party testing organization and are not tested in production.
5.4
Memory
5.4.1
Flash characteristics
Table17 Flash Memory Characteristics
Symbol
Parameter
Condition
Minimum
value
Typical
value
Maximum
value
Unit
tprog
16-bit programming
time
TA = -40~105℃
VDD=2.4~3.6V
32.2
33.2
35.2
μs
tERASE
Page (1K bytes) erase
time
TA = -40~105℃
VDD=2.4~3.6V
1.34
1.38
1.50
ms
tME
Mass erase time
TA = 25℃
VDD=3.3V
-
-
6.5
ms
Vprog
Programming voltage
TA = -40~105℃
2.0
3.3
3.6
V
Note: The data are obtained from a comprehensive evaluation and are not tested in production.
Table18 FLASH Memory Life and Data Retention Period
Symbol
Parameter
Condition
Minimum
value
Typical
value
Maximum
value
Unit
NEND
Erasure cycles
TA =-40~85℃
100
-
-
1,000
cycles
tRET
Data retention
period
TA = 55
℃
20
-
-
Year
Note: The data are obtained from a comprehensive evaluation and are not tested in production.



Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 73 74 75 76 77 78


数据表 下载

Go To PDF Page


链接网址



ALLDATASHEET是否为您带来帮助?  [ DONATE ] 

关于 Alldatasheet   |   广告服务   |   联系我们   |   隐私政策   |   数据表链接    |   链接交换   |   制造商名单
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com