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IRFP064B 数据表(PDF) 2 Page - Inchange Semiconductor Company Limited |
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IRFP064B 数据表(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 7 page ![]() isc N-Channel MOSFET Transistor IRFP064B isc website:www.iscsemi.com isc & iscsemi is registered trademark 2023-11-09 2 ELECTRICAL CHARACTERISTIC (TC=25℃ UNLESS OTHERWISE SPECIFIED) SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= 0.25mA 60 -- -- V VGS(th) Gate Threshold Voltage VDS= VGS; ID= 0.25mA 2 -- 4 V RDS(on) Drain-Source On-Resistance VGS= 10V; ID= 70A -- 5 9 mΩ IGSS Gate-Body Leakage Current VGS= ±20V; VDS= 0 -- -- ± 100 nA IDSS Zero Gate Voltage Drain Current VDS=60V; VGS= 0 -- -- 1 uA Dynamic Characteristics Ciss Input Capacitance VGS = 0V, VDS = 33V, f = 1.0MHz -- 5946 -- pF Coss Output Capacitance -- 1517 -- Crss Reverse Transfer Capacitance -- 2319 -- Qg Total Gate Charge VDD = 33V, ID = 80A, VGS = 10V -- 385 -- nC Qgs Gate-Source Charge -- 31 -- Qgd Gate-Drain Charge -- 223 -- td(on) Turn-on Delay Time VDD = 33V, ID = 80A, RG = 2.5Ω -- 49 -- nS tr Turn-on Rise Time -- 156 -- td(off) Turn-off Delay Time -- 150 -- tf Turn-off Fall Time -- 107 -- Drain-Source Body Diode Characteristics VSD Forward On-Voltage IS= 80A; VGS= 0 -- -- 1.2 V trr Reverse Recovery Time VGS = 0V,IF = 80A, diF/dt = 100A /μs -- 240 -- nS Qrr Reverse Recovery Charge -- 659 -- nC |
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