IXSH45N120 datasheet(1/2 Pages) ISC

部件名	IXSH45N120

功能描述	IGBT

PDF	2 Pages

Scroll/Zoom	100%

制造商	ISC [Inchange Semiconductor Company Limited]

网页	http://www.iscsemi.cn

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1 / 2 page

IXSH45N120

IGBT

www.iscsemi.com

1

FEATURES

· High frequency IGBT with guaranteed Short Circuit SOA capability

· Fast Fall Time for switching speeds up to 20 kHz

· MOS Gate turn-on

APPLICATIONS

· AC motor speed control

· DC servo and robot drive

· Uninterruptible power supplies (UPS)

· Switch-mode and resonant-mode power supplies

ABSOLUTE MAXIMUM RATINGS(TC=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCES

Collector-Emitter Voltage

1200

V

VGE

Gate-Emitter Voltage

±

20

V

IC

Collector

Current-Continuo

us

TC=25℃

75

A

TC=90℃

45

A

ICM

Pulsed Collector Current

180

A

PD

Power Dissipation

300

W

Tj

Max. Operating Junction Temperature

150

℃

Tstg

Storage Temperature Range

-55~150

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal Resistance,Junction to Case

0.42

℃

/W

类似零件编号 - IXSH45N120

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