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USB2250 数据表(PDF) 19 Page - SMSC Corporation |
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USB2250 数据表(HTML) 19 Page - SMSC Corporation |
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19 / 36 page ![]() Ultra Fast USB 2.0 Multi-Format Flash Media Controller Datasheet SMSC USB2250/51/59 19 Revision 2.6 (05-08-08) DATASHEET MEMORY / IO INTERFACE Memory Data Bus MD[7:0] 33 29 30 31 34 35 36 37 I/O12 These signals are used to transfer data between the internal CPU and the external program memory. Note: These pins have internal weak pull-up resistors that are controlled by the MD_PU_DIS bit of the PWR_MGMT_CTL1 register. Memory Address Bus MA16 28 O12 These signals address memory locations within the external memory. MA16 is a bit generated by the ROM Mapper. Memory Address Bus MA[15:2] 2 4 107 1 113 24 111 109 106 108 110 112 114 116 O12 These signals address memory locations within the external memory. Note: USB2259 requires that MA2 be tied to 3.3V via a 10K resistor. Memory Address Bus MA1[1:0] / CLK_ SEL1[1:0] 25 27 O12 MA[1:0]: These signals address memory locations within the external memory. I/O12PD CLK_SEL[1:0]: During nRESET assertion, these pins will select the operating frequency of the external clock, and the corresponding weak pull- down resistors are enabled. When nRESET is negated, the value on these pins will be internal latched and these pins will revert to MA[1:0] functionality; the internal pull-downs will be disabled. CLK_SEL[1:0] = '00'. 24MHz CLK_SEL[1:0] = '01'. RESERVED CLK_SEL[1:0] = '10'. RESERVED CLK_SEL[1:0] = '11'. 48MHz Note: If the latched value is '1', then the corresponding MA pin is tri-stated when the chip is in the powerdown state. If the latched value is '0', then the corresponding MA pin will function identically to the MA[15:3] pins at all times (other than during nRESET assertion). Memory Write Strobe nMWR 3 O12 Program Memory Write; active low Memory Read Strobe nMRD 115 O12 Program Memory Read; active low Table 5.1 USB2250/51/59 128-Pin VTQFP Pin Descriptions (continued) NAME SYMBOL 128-PIN VTQFP BUFFER TYPE DESCRIPTION |
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