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ISCF80135 数据表(PDF) 2 Page - Inchange Semiconductor Company Limited |
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ISCF80135 数据表(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 3 page ![]() ISCF80135 eq TW015N120C SiC N-Channel MOSFET www.iscsemi.com 2 ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)DSS Drain-Source Breakdown Voltage VGS= 0V, ID=4mA 1200 -- -- V VGS(th) Gate Threshold Voltage VDS = VGS, ID = 11.7mA 3.0 -- 5.0 V RDS(on) Drain-Source On-stage Resistance VGS= 18V, ID= 50A -- -- 20 mΩ IGSS Gate Source Leakage Current VGS= -10/+25V, VDS= 0V -- -- ± 100 nA IDSS Zero Gate Voltage Drain Current VDS = 1200V, VGS = 0V -- -- 38 uA VSD Diode Forward Voltage ISD= 31A, VGS= -5V -- -- 1.38 V PACKAGE OUTLINE (UNIT: mm) |
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