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M68Z512 数据表(PDF) 1 Page - STMicroelectronics |
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M68Z512 数据表(HTML) 1 Page - STMicroelectronics |
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1 / 12 page ![]() 1/12 March 2000 M68Z512 4 Mbit (512Kb x8) Low Power SRAM with Output Enable s ULTRA LOW DATA RETENTION CURRENT – 100nA (typical) –10µA (max) s OPERATION VOLTAGE: 5V ±10% s 512 Kbit x8 SRAM with OUTPUT ENABLE s EQUAL CYCLE and ACCESS TIMES: 70ns s LOW VCC DATA RETENTION: 2V s TRI-STATE COMMON I/O s CMOS for OPTIMUM SPEED/POWER s AUTOMATIC POWER-DOWN WHEN DESELECTED s INTENDED FOR USE WITH ST ZEROPOWER® AND TIMEKEEPER® CONTROLLERS DESCRIPTION The M68Z512 is a 4 Mbit (4,194,304 bit) CMOS SRAM, organized as 524,288 words by 8 bits. The device features fully static operation requiring no external clocks or timing strobes, with equal ad- dress access and cycle times. It requires a single 5V ±10% supply, and all inputs and outputs are TTL compatible. This device has an automatic power-down feature, reducing the power consumption by over 99% when deselected. The M68Z512 is available in a 32 lead TSOP II (10 x 20mm) package. Figure 1. Logic Diagram AI03030 19 A0-A18 W DQ0-DQ7 VCC M68Z512 G VSS 8 E 32 1 TSOP II 32 (NC) 10 x 20mm Table 1. Signal Names A0-A18 Address Inputs DQ0-DQ7 Data Input/Output E Chip Enable G Output Enable W Write Enable VCC Supply Voltage VSS Ground |
类似零件编号 - M68Z512 |
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类似说明 - M68Z512 |
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