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STM32F103XC 数据表(PDF) 55 Page - STMicroelectronics |
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STM32F103XC 数据表(HTML) 55 Page - STMicroelectronics |
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55 / 118 page  STM32F103xC, STM32F103xD, STM32F103xE Electrical characteristics 55/118 5.3.7 Internal clock source characteristics The parameters given in Table 24 are derived from tests performed under ambient temperature and VDD supply voltage conditions summarized in Table 9. High-speed internal (HSI) RC oscillator LSI low speed internal RC oscillator Table 24. HSI oscillator characteristics(1) 1. VDD = 3.3 V, TA = −40 to 105 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit fHSI Frequency 8 MHz ACCHSI Accuracy of HSI oscillator TA = –40 to 105 °C ±3(2) 2. Values based on device characterization, not tested in production. % TA = 25°C ±1 ±2% tsu(HSI) HSI oscillator start up time 1 2 µs IDD(HSI) HSI oscillator power consumption 80 100 µA Table 25. LSI oscillator characteristics (1) 1. VDD = 3 V, TA = −40 to 105 °C unless otherwise specified. Symbol Parameter Conditions Min(2) 2. Value based on device characterization, not tested in production. Typ Max Unit fLSI Frequency 30 40 60 kHz tsu(LSI) LSI oscillator startup time 85 µs IDD(LSI) LSI oscillator power consumption 0.65 1.2 µA |
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