Application information

USBDFxxW5

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Figure 7.

surge

Note that the USBDFxxW5 is not only acting for positive ESD surges but also for negative

2.3

Latch-up phenomena

The early ageing and destruction of IC’s is often due to latch-up phenomena which is mainly

induced by dV/dt. Thanks to its structure, the USBDFxxW5 provides a high immunity to

latch-up phenomena by smoothing very fast edges.

2.4

Crosstalk behaviour

Figure 8.

Crosstalk phenomena

The crosstalk phenomena is due to the coupling between 2 lines. The coupling factor (

β12

or

β21 ) increases when the gap across lines decreases, this is the reason why we provide

crosstalk measurements for a monolithic device to guarantee negligeable crosstalk between

voltage at this point has got an extra value

the effect of the crosstalk phenomenon of the line 1 on the line 2. This phenomenon has to

be taken into account when the drivers impose fast digital data or high frequency analog

signals in the disturbing line. The perturbed line will be more affected if it works with low

voltage signal or high load impedance (few k

Ω).

A. Positive surge

B. Negative surge

Line 1

Line 2

DRIVERS

RECEIVERS

αβ

1

G1

1 2

G2

V+

V

αβ

2

G2

2 1

G1

V+

V