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2SC4536 数据表(PDF) 1 Page - Inchange Semiconductor Company Limited |
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2SC4536 数据表(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 3 page ![]() isc Silicon NPN RF Transistor 2SC4536 www.iscsemi.com 1 FEATURES · Low distortion: IM2 = 59.0 dBc TYP., IM3 = 82.0 dBc TYP. @ VCE = 10 V, IC = 50 mA · Low noise: NF = 2.0 dB TYP. @ VCE = 10 V, IC = 50 mA, f = 1 GHz · Small package : 3-pin power minimold package APPLICATIONS · Designed for use in middle power , low distortion low noise figure RF amplifier. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 12 V VEBO Emitter-Base Voltage 3.0 V IC Collector Current-Continuous 0.25 A PC Collector Power Dissipation @TC=25℃ 2 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -65~150 ℃ |
类似零件编号 - 2SC4536 |
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类似说明 - 2SC4536 |
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