2SC5226A datasheet(1/2 Pages) ISC

部件名	2SC5226A

功能描述	Silicon NPN RF Power Transistor

PDF	2 Pages

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制造商	ISC [Inchange Semiconductor Company Limited]

网页	http://www.iscsemi.cn

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Silicon NPN RF Power Transistor

2SC5226A

www.iscsemi.com

1

FEATURES

·

Low−noise: NF = 1.5 dB Typ (f = 1 GHz)

·

High Gain: |S21e|2 = 12.2 dB Typ (f = 1 GHz)

·

High Cut−off Frequency: fT = 8 GHz Typ

APPLICATIONS

·

Low noise, High-gain amplifiers

·

Linear broadband amplifiers

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

20

V

VCEO

Collector-Emitter Voltage

10

V

VEBO

Emitter-Base Voltage

2

V

IC

Collector Current-Continuous

70

mA

PC

Collector Power Dissipation

150

mW

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature Range

-55~150

℃

ELECTRICAL CHARACTERISTICS （TC=25℃ unless otherwise specified）

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP MAX

UNIT

ICBO

Collector Cutoff Current

VCB= 10V; IE= 0

-

1.0

μA

IEBO

Emitter Cutoff Current

VEB= 1V; IC= 0

-

10

μA

hFE

DC Current Gain

IC= 20mA ; VCE= 6V

60

-

270

-

fT

Current-Gain—Bandwidth Product

IC= 20mA ; VCE= 6V ;f= 1GHz

-

8

-

GHz

|

S21e|2

Insertion Power Gain

IC= 20mA ; VCE= 6V; f= 1GHz

-

12.2

-

dB

NF

Noise Figure

IC =5mA, VCE = 6V, f= 1GHz

-

1.5

-

dB

类似零件编号 - 2SC5226A

制造商	部件名	数据表	功能描述
Sanyo Semicon Device	2SC5226A	70Kb / 6P	VHF to UHF Wide-Band Low-Noise Amplifier Applications
	2SC5226A	463Kb / 8P	VHF to UHF Wide-Band Low-Noise Amplifi er Applications
	2SC5226A	463Kb / 8P	VHF to UHF Wide-Band Low-Noise Amplifi er Applications
ON Semiconductor	2SC5226A	354Kb / 8P	RF Transistor 10V, 70mA, fT=7GHz, NPN Single MCP August, 2013
Sanyo Semicon Device	2SC5226A-4-TL-E	463Kb / 8P	VHF to UHF Wide-Band Low-Noise Amplifi er Applications

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