BFR193W datasheet(1/2 Pages) ISC

部件名	BFR193W

功能描述	Silicon NPN RF Power Transistor

PDF	2 Pages

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制造商	ISC [Inchange Semiconductor Company Limited]

网页	http://www.iscsemi.cn

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1 / 2 page

Silicon NPN RF Power Transistor

BFR193W

www.iscsemi.com

1

FEATURES

·

Qualification report according to AEC-Q101 available

·

Pb-free (RoHS compliant) package

APPLICATIONS

·

Low noise, High-gain amplifiers up to 2 GHz

·

Linear broadband amplifiers

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

20

V

VCEO

Collector-Emitter Voltage

12

V

VEBO

Emitter-Base Voltage

2

V

IC

Collector Current-Continuous

80

mA

PC

Collector Power Dissipation

@TC<63℃

580

mW

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature Range

-55~150

℃

ELECTRICAL CHARACTERISTICS （TC=25℃ unless otherwise specified）

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP MAX

UNIT

ICBO

Collector Cutoff Current

VCB= 10V; IE= 0

-

100

nA

IEBO

Emitter Cutoff Current

VEB= 1V; IC= 0

-

1.0

μA

hFE

DC Current Gain

IC= 20mA ; VCE= 6V

70

-

140

-

fT

Current-Gain—Bandwidth Product

IC= 20mA ; VCE= 6V ;f= 1GHz

-

8

-

GHz

|

S21e|2

Insertion Power Gain

IC= 20mA ; VCE= 6V; f= 1GHz

-

13

-

dB

NF

Noise Figure

IC =5mA, VCE = 6V, f= 1GHz

-

1.5

-

dB

类似零件编号 - BFR193W

制造商	部件名	数据表	功能描述
Siemens Semiconductor G...	BFR193W	56Kb / 7P	NPN Silicon RF Transistor (For low noise, high-gain amplifiers up to 2GHz For linear broadband amplifiers)
Infineon Technologies A...	BFR193W	80Kb / 7P	NPN Silicon RF Transistor Aug-09-2001
	BFR193W	77Kb / 7P	NPN Silicon RF Transistor 2007-03-30
	BFR193W	660Kb / 6P	For low noise, high-gain amplifiers up to 2 GHz 2014-04-07
	BFR193W	77Kb / 7P	NPN Silicon RF Transistor 2007-03-30

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