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DSTF30100S 数据表(PDF) 1 Page - Inchange Semiconductor Company Limited |
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DSTF30100S 数据表(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page  Schottky Barrier Rectifier Diode DSTF30100S www.iscsemi.com 1 FEATURES · High frequency operation · Ultra low forward voltage drop · High junction temperature capability APPLICATIONS · DC-DC converters · Switching mode power supply · Polarity Protection Diodes ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VRRM max. repetitive reverse blocking voltage 100 V IF(AV) Average Forward Current (per device) 50% duty cycle @TC =70°C rectangular wave form 30 A IFSM Peak One Cycle Non-Repetitive Surge Current (per leg) 8.3 ms, half Sine pulse 300 A TJ junction temperature 150 ℃ Tstg storage temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance Junction to Case (per leg) DC operation 4.0 ℃ /W ELECTRICAL CHARACTERISTICS(TJ = 25°C unless otherwise specified) SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT VF Forward Voltage Drop (per leg) IF= 30A -- -- 0.9 V IR Reverse Current (per leg) Rate DC Voltage -- -- 1.0 uA |
类似零件编号 - DSTF30100S |
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类似说明 - DSTF30100S |
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