| 数据搜索系统,热门电子元器件搜索 |
|
IXFK32N100Q3 数据表(PDF) 1 Page - Inchange Semiconductor Company Limited |
|
|
|||||||||||||||||||||||||||||
IXFK32N100Q3 数据表(HTML) 1 Page - Inchange Semiconductor Company Limited |
|
1 / 3 page ![]() isc N-Channel MOSFET Transistor IXFK32N100Q3 www.iscsemi.com 1 FEATURES · Drain Current -ID= 32A@ TC=25℃ · Drain Source Voltage -VDSS=1000V(Min) · Drain-Source Saturation Voltage -RDS(on) = 320mΩ(Max)@VGS= 10V, ID= 16A APPLICATION · DC-DC Converters · Battery Chargers · DC Choppers · Temperature and Lighting Controls ABSOLUTE MAXIMUM RATINGS(Ta=25℃) THERMAL CHARACTERISTICS SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 1000 V VGS Gate-Source Voltage-Continuous ± 30 V ID Drain Current-Continuous 32 A IDM Pulsed Drain Current 96 A EAS Single Pulse Avalanche Energy 2 J dv/dt Peak Diode Recovery dv/dt 50 V/ns PD Total Dissipation 1250 W TJ Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 0.1 ℃ /W |
类似零件编号 - IXFK32N100Q3 |
|
类似说明 - IXFK32N100Q3 |
|
|
|
链接网址 |
| ALLDATASHEET是否为您带来帮助? [ DONATE ] |
关于 Alldatasheet | 广告服务 | 联系我们 | 隐私政策 | 数据表链接 | 链接交换 | 制造商名单 All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |