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ACTQ433 数据表(PDF) 3 Page - Advanced Crystal Technology

部件名 ACTQ433
功能描述  two-port, 180째 surface-acoustic-wave (SAW) resonator
PDF  3 Pages
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制造商  ACT [Advanced Crystal Technology]
网页  http://www.actcrystals.com
标志 ACT - Advanced Crystal Technology

ACTQ433 数据表(HTML) 3 Page - Advanced Crystal Technology

  ACTQ433 Datasheet HTML 1Page - Advanced Crystal Technology ACTQ433 Datasheet HTML 2Page - Advanced Crystal Technology ACTQ433 Datasheet HTML 3Page - Advanced Crystal Technology  
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Tel
:
+44 118 979 1238
Fax :
+44 118 979 1283
Email: info@actcrystals.com
In keeping with our ongoing policy of product evolvement and improvement, the above specification is subject to change without notice.
ISO9001: 2000 Registered
-
Registration number 6830/2
For quotations or further information please contact us at:
3 The Business Centre, Molly Millars Lane, Wokingham, Berks, RG41 2EY, UK
http://www.actcrystals.com
iCAUTION: Electrostatic Sensitive Device. Observe precautions for handling!
1.
The frequency fC is the frequency of minimum IL with the resonator in the specified test fixture in a 50 Ω test
system with VSWR
≤ 1.2:1. Typically, fOSCILLATOR or fTRANSMITTER is less than the resonator fC.
2.
Unless noted otherwise, case temperature TC = +25°C±2°C.
3.
Frequency aging is the change in fC with time and is specified at +65°C or less. Aging may exceed the
specification for prolonged temperatures above +65°C. Typically, aging is greatest the first year after
manufacture, decreasing in subsequent years.
4.
Turnover temperature, T0, is the temperature of maximum (or turnover) frequency, f 0. The nominal frequency at
any case temperature, TC, may be calculated from: f = f 0 [1 - FTC (T0 - TC)
2]. Typically, oscillator T
0 is 20° less
than the specified resonator T0.
5.
This equivalent RLC model approximates resonator performance near the resonant frequency and is provided
for reference only. The capacitance C0 is the measured static (non-motional) capacitance between either Pin 1
and ground or Pin 2 and ground. The measurement includes case parasitic capacitance.
6.
Derived mathematically from one or more of the following directly measured parameters: f C, IL, 3 dB bandwidth,
fC versus TC, and C0.
7.
The specifications of this device are based on the test circuit shown above and subject to change or
obsolescence without notice.
8.
Typically, equipment utilizing this device requires emissions testing and government approval, which is the
responsibility of the equipment manufacturer.
9.
Our liability is only assumed for the Surface Acoustic Wave (SAW) component(s) per se, not for applications,
processes and circuits implemented within components or assemblies.
Issue : 1 C1
Date : SEPT 04



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