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ST6G3240 数据表(PDF) 13 Page - STMicroelectronics

部件名 ST6G3240
功能描述  Dual supply level translator for dual memory cards (mini SD/micro SD managed NAND)
PDF  29 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

ST6G3240 数据表(HTML) 13 Page - STMicroelectronics

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ST6G3240
Electrical characteristics
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Table 9.
DC specification for VCCBn
Symbol
Parameter
Test conditions
Value
Unit
VCCA
(V)
VCCBn
(V)
TA = 25 °C
-40 to 85 °C
Min
Max
Min
Max
VIH
High level input
voltage
1.4 – 3.6
1.4 – 1.95
0.65
VCCBn
0.65
VCCBn
V
1.95 – 2.7
1.7
1.7
2.7 – 3.6
2.0
2.0
VIL
Low level input
voltage
1.4 – 3.6
1.4 – 1.95
0.35
VCCBn
0.35
VCCBn
V
1.95 – 2.7
0.7
0.7
2.7 – 3.6
0.8
0.8
VOH
High level
output voltage
1.4 – 3.6
1.4 – 3.6
IOH = -100 µA
VCCBn-
0.1
VCCBn-
0.1
V
1.4
IOH = -1 mA
1.10
1.10
1.65
IOH = -2 mA
1.20
1.20
2.7
IOH = -4 mA
2.20
2.20
3.0
IOH = -8 mA
2.30
2.30
3.6
IOH = -8 mA
3.00
3.00
VOL
Low level
output voltage
1.4 – 3.6
1.4 – 3.6
IOL = 100 µA
0.20
0.20
V
1.4
IOL = 1 mA
0.35
0.35
1.65
IOL = 2 mA
0.45
0.45
2.7
IOL = 4 mA
0.55
0.55
3.0
IOL = 8 mA
0.70
0.70
3.6
IOL = 8 mA
0.70
0.70
IIBn
Input leakage
current per
input channel
1.4 – 3.6
1.4 – 3.6
VIBn =VCCBn or
GND
±0.5
±5
µA
IOZBn
High
impedance
output leakage
current
3.6
3.6
VIA = GND to
3.6 V
VIBn = GND to
3.6
IN1,IN2 = VCCA
or
IN1,IN2 = GND
±1.0
±10
µA
IOFF
Power off B-
side I/O
leakage current
00
VIBn=0 to 3.6V
INn= 0,
DIR =0
±1.0
±10
µA



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