MJD117 datasheet(1/6 Pages) STMICROELECTRONICS

部件名	MJD117

功能描述	COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

PDF	6 Pages

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制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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1 / 6 page

MJD112

MJD117

COMPLEMENTARY SILICON POWER

DARLINGTON TRANSISTORS

s

SGS-THOMSON PREFERRED SALESTYPES

s

LOW BASE-DRIVE REQUIREMENTS

s

INTEGRATED ANTIPARALLEL

COLLECTOR-EMITTER DIODE

s

SURFACE-MOUNTING TO-252 (DPAK)

POWER PACKAGE IN TAPE & REEL

(SUFFIX ”T4”)

s

ELECTRICAL SIMILAR TO TIP112 AND

TIP117

APPLICATIONS

s

GENERAL PURPOSE SWITCHING AND

AMPLIFIER

DESCRIPTION

The MJD112 and MJD117 form complementary

PNP - NPN pairs.

They are manufactured using Epitaxial Base

technology for cost-effective performance.

INTERNAL SCHEMATIC DIAGRAM

R1(typ) = 7K

Ω

R2(typ) = 200

Ω

September 1997

ABSOLUTE MAXIMUM RATINGS

Symbol

Parame ter

Value

Unit

VCBO

Collector-Emitter Voltage (IE = 0)

100

V

VCEO

Collector-Emitter Voltage (IB = 0)

100

V

VEBO

Emitter-Base Voltage (IC =0)

5

V

IC

Collector Current

2

A

ICM

Collector Peak Current (tp <5 ms)

4

A

IB

Base Current

0.05

A

Ptot

Tot al Dissipation at Tc =25

oC20

W

Tstg

Storage Temperature

-65 to 150

oC

Tj

Max. Ope ra ting Ju nction Temperature

150

oC

For PNP type voltage and current values are negative.

1

3

DPAK

TO-252

(Suffix ”T4”)

1/6

类似零件编号 - MJD117

制造商	部件名	数据表	功能描述
ON Semiconductor	MJD117	147Kb / 8P	Complementary Darlington Power Transistors August, 2004 ??Rev. 5
KEC(Korea Electronics)	MJD117	394Kb / 2P	EPITAXIAL PLANAR PNP TRANSISTOR (MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE.)
Fairchild Semiconductor	MJD117	59Kb / 5P	D-PAK for Surface Mount Applications
ON Semiconductor	MJD117	101Kb / 8P	Complementary Darlington Power Transistors January, 2006 ??Rev. 7
STMicroelectronics	MJD117	250Kb / 6P	COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS Jan-2003

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