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2STF1340 数据表(PDF) 4 Page - STMicroelectronics

部件名 2STF1340
功能描述  Low voltage fast-switching NPN power bipolar transistor
PDF  8 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

2STF1340 数据表(HTML) 4 Page - STMicroelectronics

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Electrical characteristics
2STF1340
4/8
2
Electrical characteristics
(Tcase = 25°C unless otherwise specified)
Note (2) Pulsed duration = 300
µs, duty cycle ≤1.5%
Table 3.
Electrical characteristics
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ICBO
Collector cut-off current
(IE =0)
VCB = 40V
0.1
µA
IEBO
Emitter cut-off current
(IC =0)
VEB = 5V
0.1
µA
V(BR)CBO
Collector-emitter
breakdown voltage
(IE = 0)
IC = 100µA
40
V
V(BR)CEO (2)
Collector-emitter
breakdown voltage
(IB = 0)
IC = 10mA
40
V
V(BR)EBO
Emitter-base breakdown
voltage (IC = 0)
IE = 100µA
5V
VCE(sat) (2) Collector-emitter
saturation voltage
IC = 2A
IB = 100mA
IC = 3A
IB = 150mA
0.2
0.3
V
V
VBE(sat) (2)
Base-emitter saturation
voltage
IC = 2A
IB = 100mA
0.9
1.25
V
hFE (2)
DC current gain
IC = 0.1A
VCE = 2V
IC = 1A
VCE = 2V
IC = 3A
VCE = 2V
280
250
200
fT
Transition frequency
IC = 0.1A
VCE = 5V
f = 100MHz
100
MHz
CCBO
Collector-base
capacitance
IE = 0
VCB = 10V
f = 1MHz
tbd
pF
ton
toff
Resistive load
Turn-on time
Turn-off time
IC = 1.5A
VCC = 10V
IB1 = -IB2 = 150mA
tbd
tbd
ns
ns



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