MJD31C datasheet(1/5 Pages) STMICROELECTRONICS

部件名	MJD31C

功能描述	COMPLEMENTARY SILICON POWER TRANSISTORS

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制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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MJD31B/31C

MJD32B/32C

COMPLEMENTARY SILICON POWER TRANSISTORS

s

STMicroelectronics PREFERRED

SALESTYPES

s

SURFACE-MOUNTING TO-252 (DPAK)

POWER PACKAGE IN TAPE & REEL

(SUFFIX ”T4”)

s

ELECTRICALLY SIMILAR TO TIP31B/C AND

TIP32B/C

APPLICATIONS

s

GENERAL PURPOSE SWITCHING AND

AMPLIFIER TRANSISTORS

DESCRIPTION

The MJD31B and MJD31C and the MJD32B and

MJD32C form complementary NPN-PNP pairs.

They are manufactured using Epitaxial Base

technology for cost-effective performance.

®

INTERNAL SCHEMATIC DIAGRAM

May 1999

1

3

DPAK

TO-252

(Suffix ”T4”)

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

Uni t

NPN

MJD31B

MJD31C

PNP

MJD32B

MJD32C

VCBO

Collect or-Base Voltage (IE =0)

80

100

V

VCEO

Collect or-Emitter Voltage (IB =0)

80

100

V

VEBO

Emitter-Base Voltage (IC =0)

5

V

IC

Collect or Current

3

A

ICM

Collect or Peak Current

5

A

IB

Base Current

1

A

Ptot

Tot al Dissipation at Tc =25

oC15

W

Tstg

Storage T emperat ure

-65 t o 150

oC

Tj

Max. O perating Junction Temperature

150

oC

For PNP types the values are intented negative.

1/5

类似零件编号 - MJD31C

制造商	部件名	数据表	功能描述
ON Semiconductor	MJD31C	150Kb / 6P	SILICON POWER TRANSISTORS 1998
Fairchild Semiconductor	MJD31C	49Kb / 5P	General Purpose Amplifier Low Speed Switching Applications
ON Semiconductor	MJD31C	81Kb / 8P	Complementary Power Transistors June, 2005 ??Rev. 6
STMicroelectronics	MJD31C	243Kb / 9P	Low voltage NPN power transistor 20-Apr-2007
STMicroelectronics	MJD31C	241Kb / 9P	Low voltage NPN power transistor 24-Apr-2007

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