MJD44H11 datasheet(2/5 Pages) STMICROELECTRONICS

部件名	MJD44H11

功能描述	COMPLEMENTARY SILICON PNP TRANSISTORS

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制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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THERMAL DATA

Rthj-ca se

Thermal Resistance Junction-case

Max

6.25

oC/W

ELECTRICAL CHARACTERISTICS (Tcase =25

oC unless otherwise specified)

Symb ol

Parameter

Test Cond ition s

Mi n.

Typ .

Max.

Un it

VCEO(sus )

∗ Collector-Emitter

Sustaining Voltage

IC =30 mA

ICES

Collect or Cut-off

Current

VCB =rated VCEO VBE =0

µA

IEBO

Emitt er Cut-off Current

VEB =5V

µA

VCE(sat)

∗ Collector-Emitter

Saturat ion Voltage

IC =8 A

IB =0.4 A

VBE(s at)

∗ Base-Emitter

Saturat ion Voltage

IC =8 A

IB = 0.8 A

1.5

hFE

∗

DC Current G ain

IC =2 A

VCE =1 V

IC =4 A

VCE =1 V

∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 2%

∗ For PNP types the values are intented negative.

Safe Operating Area

Derating Curves

MJD44H11 / MJD45H11

2/5

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