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MJE13007 数据表(PDF) 2 Page - STMicroelectronics

部件名 MJE13007
功能描述  SILICON NPN SWITCHING TRANSISTOR
PDF  4 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

MJE13007 数据表(HTML) 2 Page - STMicroelectronics

  MJE13007 Datasheet HTML 1Page - STMicroelectronics MJE13007 Datasheet HTML 2Page - STMicroelectronics MJE13007 Datasheet HTML 3Page - STMicroelectronics MJE13007 Datasheet HTML 4Page - STMicroelectronics  
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THERMAL DATA
Rthj-ca se
Thermal Resistance Junction-case
Max
1.56
oC/W
ELECTRICAL CHARACTERISTICS (Tcase =25
oC unless otherwise specified)
Symb ol
Parameter
Test Cond ition s
Mi n.
Typ .
Max.
Un it
ICEV
Collect or Cut-off
Current (VBE = -1.5V)
VCE =rated VCEV
VCE =rated VCEV
Tc =100
o C
1
5
mA
mA
IEBO
Emitt er Cut-off Current
(IC =0)
VEB =9 V
1
mA
VCEO(sus )
∗ Collector-Emitter
Sustaining Voltage
IC = 10 mA
400
V
VCE(sat)
∗ Collector-Emitter
Saturat ion Voltage
IC =2 A
IB =0.4 A
IC =5 A
IB =1 A
IC =8 A
IB =2 A
IC =5 A
IB =1 A
Tc =100
oC
1
1.5
3
2
V
V
V
V
VBE(s at)
∗ Base-Emitter
Saturat ion Voltage
IC =2 A
IB =0.4 A
IC =5 A
IB =1 A
IC =5 A
IB =1 A
Tc =100
oC
1.2
1.6
1.5
V
V
V
hFE
∗
DC Current G ain
IC =2 A
VCE =5 V
IC =5 A
VCE =5 V
8
6
40
30
fT
Transit ion F requency
IC =0.5 A
VCE =10 V
f = 1 MHz
4
MHz
CCBO
Output Capacit ance
IE =0
VCB = 10 V
f = 0.1 MHz
110
pF
RESISTIVE LOAD
Symb ol
Parameter
Test Co ndi tio ns
Min .
Typ.
Max.
Unit
ton
Turn-on T ime
VCC = 125 V
IC =5 A
IB1 =-IB2 =1 A
tp =25
µs Duty Cycle < 1%
0.7
µs
ts
St orage Time
3ms
tf
Fall Time
0.7
ms
INDUCTIVE LOAD
Symb ol
Parameter
Test Co ndi tio ns
Min .
Typ.
Max.
Unit
tf
Fall Time
VCC = 125 V
IC =5 A
IB1 =1 A
tp =25
µs Duty Cycle < 1%
0.3
µs
tf
Fall Time
VCC = 125 V
IC =5 A
IB1 =1 A
tp =25
µs Duty Cycle < 1%
Tc =100
oC
0.6
µs
* Pulsed: Pulse duration = 300
µs, duty cycle 2 %
MJE13007
2/4



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