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MMBT2907A 数据表(PDF) 2 Page - STMicroelectronics

部件名 MMBT2907A
功能描述  SMALL SIGNAL PNP TRANSISTOR
PDF  4 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

MMBT2907A 数据表(HTML) 2 Page - STMicroelectronics

  MMBT2907A Datasheet HTML 1Page - STMicroelectronics MMBT2907A Datasheet HTML 2Page - STMicroelectronics MMBT2907A Datasheet HTML 3Page - STMicroelectronics MMBT2907A Datasheet HTML 4Page - STMicroelectronics  
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THERMAL DATA
Rthj-amb
• Thermal Resistance Junction-Ambient
Max
357.1
oC/W
• Device mounted on a PCB area of 1 cm2
ELECTRICAL CHARACTERISTICS (Tcase = 25
oC unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ICEX
Collector Cut-off
Current (VBE = -3 V)
VCE = -30 V
-50
nA
IBEX
Base Cut-off Current
(VBE = -3 V)
VCE = -30 V
-50
nA
ICBO
Collector Cut-off
Current (IE = 0)
VCB = -50 V
-10
nA
V(BR)CEO
∗ Collector-Emitter
Breakdown Voltage
(IB = 0)
IC = -10 mA
-60
V
V(BR)CBO
Collector-Base
Breakdown Voltage
(IE = 0)
IC = -10
µA
-60
V
V(BR)EBO
Emitter-Base
Breakdown Voltage
(IC = 0)
IE = -10
µA
-5
V
VCE(sat)
∗ Collector-Emitter
Saturation Voltage
IC = -150 mA
IB = -15 mA
IC = -500 mA
IB = -50 mA
-0.4
-1.6
V
V
VBE(sat)
∗ Collector-Base
Saturation Voltage
IC = -150 mA
IB = -15 mA
IC = -500 mA
IB = -50 mA
-1.3
-2.6
V
V
hFE
∗
DC Current Gain
IC = -0.1 mA
VCE = -10 V
IC = -1 mA
VCE = -10 V
IC = -10 mA
VCE = -10 V
IC = -150 mA
VCE = -10 V
IC = -500 mA
VCE = -10 V
75
100
100
100
50
300
fT
Transition Frequency
IC = -50 mA VCE = -20V f = 100MHz
200
MHz
CCBO
Collector-Base
Capacitance
IE = 0
VCB = -10 V
f = 1 MHz
8
pF
CEBO
Emitter-Base
Capacitance
IC = 0
VEB = -2 V
f = 1 MHz
30
pF
td
Delay Time
IC = -150 mA
IB = -15 mA
VCC = -30V
10
ns
tr
Rise Time
40
ns
ton
Switching On Time
45
ns
ts
Storage Time
IC = -150 mA
IB1 = -IB2 = -15mA
VCC = -30V
190
ns
tf
Fall Time
30
ns
toff
Switching Off Time
220
ns
∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 2 %
MMBT2907A
2/4



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