TDA7575BPD datasheet(7/32 Pages) STMICROELECTRONICS

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TDA7575B

Electrical specifications

7/32

Output power

Single channel configuration

Ω pin >2.5V); R

L = 1Ω;

THD 3%

Max. power(1)

140

150

THD

Total harmonic distortion

PO = 1-12W; STD MODE

HE MODE; PO = 1-2W

HE MODE; PO = 4-8W

0.03

0.5

0.1

PO = 1-12W, f = 10kHz

0.15

0.5

RL = 2; HE MODE; Po = 3W

0.03

0.5

Single channel configuration

Ω pin >2.5V); R

L = 1; PO = 4-

30W

0.02

0.1

Cross talk

Rg = 600Ω; PO = 1W

RIN

Input impedance

100

130

GV1

Voltage gain 1 (default)

ΔG

Voltage gain match 1

-1

GV2

Voltage gain 2

ΔG

Voltage gain match 2

-1

EIN1

Output noise voltage gain 1

Rg = 600Ω; Gv = 26dB

filter 20 to 22kHz

μV

EIN2

Output noise voltage gain 2

Rg = 600Ω; Gv = 12dB

filter 20 to 22kHz

μV

SVR

Supply voltage rejection

f = 100Hz to 10kHz; Vr = 1Vpk;

Rg = 600Ω

Power bandwidth

(-3dB)

100

KHz

ASB

Stand-by attenuation

100

ISB

Stand-by current consumption

Vst-by = 0V

μA

Mute attenuation

VOS

Offset voltage

Mute & play

-45

VAM

Min. supply mute threshold

7.5

CMRR

Input CMRR

VCM = 1Vpk-pk; Rg = 0 Ω

VMC

Maximum common mode input

level

f = 1kHz

Vrms

Slew rate

1.5

μs

ΔV

During mute ON/OFF output

offset voltage

ITU R-ARM weighted

see Figure 23

-10

+10

During St-By ON/OFF output

offset voltage

-10

+10

Table 4.

Electrical characteristics (continued)

(VS = 14.4V; f=1KHz; RL=4Ω; Tamb= 25°C unless otherwise specified)

Symbol

Parameter

Test condition

Min.

Typ.

Max.

Unit

TDA7575BPD 数据表(PDF) 7 Page - STMicroelectronics

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