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MMBT3904 数据表(PDF) 2 Page - STMicroelectronics

部件名 MMBT3904
功能描述  SMALL SIGNAL NPN TRANSISTOR
PDF  4 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

MMBT3904 数据表(HTML) 2 Page - STMicroelectronics

  MMBT3904 Datasheet HTML 1Page - STMicroelectronics MMBT3904 Datasheet HTML 2Page - STMicroelectronics MMBT3904 Datasheet HTML 3Page - STMicroelectronics MMBT3904 Datasheet HTML 4Page - STMicroelectronics  
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THERMAL DATA
Rthj-amb
• Thermal Resistance Junction-Ambient
Max
357.1
oC/W
Device mounted on a PCB area of 1 cm2
ELECTRICAL CHARACTERISTICS (Tcase = 25
oC unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ICEX
Collector Cut-off
Current (VBE = -3 V)
VCE = 30 V
50
nA
IBEX
Base Cut-off Current
(VBE = -3 V)
VCE = 30 V
50
nA
V(BR)CEO
∗ Collector-Emitter
Breakdown Voltage
(IB = 0)
IC = 1 mA
40
V
V(BR)CBO
Collector-Base
Breakdown Voltage
(IE = 0)
IC = 10
µA
60
V
V(BR)EBO
Emitter-Base
Breakdown Voltage
(IC = 0)
IE = 10
µA
6V
VCE(sat)
∗ Collector-Emitter
Saturation Voltage
IC = 10 mA
IB = 1 mA
IC = 50 mA
IB = 5 mA
0.2
0.2
V
V
VBE(sat)
∗ Base-Emitter
Saturation Voltage
IC = 10 mA
IB = 1 mA
IC = 50 mA
IB = 5 mA
0.65
0.85
0.95
V
V
hFE
DC Current Gain
IC = 0.1 mA
VCE = 1 V
IC = 1 mA
VCE = 1 V
IC = 10 mA
VCE = 1 V
IC = 50 mA
VCE = 1 V
IC = 100 mA
VCE = 1 V
60
80
100
60
30
300
fT
Transition Frequency
IC = 10 mA VCE = 20 V f = 100 MHz
250
270
MHz
CCBO
Collector-Base
Capacitance
IE = 0
VCB = 10 V
f = 1 MHz
4
pF
CEBO
Emitter-Base
Capacitance
IC = 0
VEB = 0.5 V
f = 1MHz
18
pF
NF
Noise Figure
VCE = 5 V
IC = 0.1 mA
f = 10 Hz
to 15.7 KHz
RG = 1 K
5dB
td
tr
Delay Time
Rise Time
IC = 10 mA
IB = 1 mA
VCC = 30 V
35
35
ns
ns
ts
tf
Storage Time
Fall Time
IC = 10 mA
IB1 = -IB2 = 1 mA
VCC = 30 V
200
50
ns
ns
∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 2 %
MMBT3904
2/4



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